Preparation of periodic surface structures on doped poly(methyl metacrylate) films by irradiation with KrF excimer laser
نویسندگان
چکیده
In this work, we describe laser modification of poly(methyl methacrylate) films doped with Fast Red ITR, followed by dopant exclusion from the bulk polymer. By this procedure, the polymer can be modified under extremely mild conditions. Creation of surface ordered structure was observed already after application of 15 pulses and 12 mJ cm(-2) fluence. Formation of grating begins in the hottest places and tends to form concentric semi-circles around them. The mechanism of surface ordered structure formation is attributed to polymer ablation, which is more pronounced in the place of higher light intensity. The smoothness of the underlying substrate plays a key role in the quality of surface ordered structure. Most regular grating structures were obtained on polymer films deposited on atomically 'flat' Si substrates. After laser patterning, the dopant was removed from the polymer by soaking the film in methanol.
منابع مشابه
بررسی تأثیر تابش لیزر بر خواص الکتریکی و ساختاری لایههای نازک ZnO
In this paper, ZnO thin film was prepared by sol-gel process on glass substrates. The deposited films were dried at 100 and 240 ˚C and then annealed at 300, 400 and 500 ˚C. The two-probe measurement showed that resistance of as-prepared films is very high. The KrF excimer (λ=248 nm) laser irradiation with 1000 pulses, frequency of 1 Hz and 90 mJ/cm2 energy on surface of film resulted in the re...
متن کاملEffects of KrF „248 nm... excimer laser irradiation on electrical and optical properties of GaN:Mg
The electrical and optical characteristics of GaN:Mg irradiated by a pulsed KrF ~248 nm! excimer laser have been studied. When an as-grown Mg-doped GaN film was irradiated by an excimer laser at an energy density of 590 mJ/cm in a nitrogen atmosphere, the hole concentration was drastically increased up to 4.42310 cm. Furthermore, a GaN:Mg thin film, which was treated by laser irradiation follow...
متن کاملTemporal profile of optical transmission probe for pulsed-laser heating of amorphous silicon films
Pulsed laser irradiation is employed over a wide spectrum of materials processing applications, including surface hardening, alloying, curing, synthesis of compound and semiconductor films. In semiconductor systems,* it is used to anneal ion-implantation surface damage, recrystallize amorphous and polycrystalline films, and enhance dopant diffusion. Recent studies2 have shown that one of the mo...
متن کاملPreparation of Ultrafine Fe–Pt Alloy and Au Nanoparticle Colloids by KrF Excimer Laser Solution Photolysis
We prepared ultrafine Fe-Pt alloy nanoparticle colloids by UV laser solution photolysis (KrF excimer laser of 248 nm wavelength) using precursors of methanol solutions into which iron and platinum complexes were dissolved together with PVP dispersant to prevent aggregations. From TEM observations, the Fe-Pt nanoparticles were found to be composed of disordered FCC A1 phase with average diameter...
متن کاملEffects of laser wavelength and fluence on the growth of ZnO thin films by pulsed laser deposition
Transparent, electrically conductive and c-axis oriented ZnO thin films have been grown by the pulsed laser deposition (PLD) technique on silicon and Coming glass substrates employing either a KrF excimer laser (3. = 248 nm) or a frequency-doubled Nd:YAG laser (3. = 532 rim). The crystalline structure, surface morphology, optical and electrical properties of the deposited films were found to de...
متن کامل